JPH057860B2 - - Google Patents
Info
- Publication number
- JPH057860B2 JPH057860B2 JP58107843A JP10784383A JPH057860B2 JP H057860 B2 JPH057860 B2 JP H057860B2 JP 58107843 A JP58107843 A JP 58107843A JP 10784383 A JP10784383 A JP 10784383A JP H057860 B2 JPH057860 B2 JP H057860B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- periphery
- semiconductor wafer
- temperature
- lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000000137 annealing Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- -1 boron ions Chemical class 0.000 claims description 11
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- 229910052785 arsenic Inorganic materials 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 4
- 238000011084 recovery Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 64
- 238000010438 heat treatment Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000809 Alumel Inorganic materials 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910001179 chromel Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10784383A JPS60732A (ja) | 1983-06-17 | 1983-06-17 | アニ−ル方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10784383A JPS60732A (ja) | 1983-06-17 | 1983-06-17 | アニ−ル方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60732A JPS60732A (ja) | 1985-01-05 |
| JPH057860B2 true JPH057860B2 (en]) | 1993-01-29 |
Family
ID=14469463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10784383A Granted JPS60732A (ja) | 1983-06-17 | 1983-06-17 | アニ−ル方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60732A (en]) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS583325A (ja) * | 1981-06-29 | 1983-01-10 | Fujitsu Ltd | インバ−タ回路 |
| JP2002141298A (ja) * | 2000-11-02 | 2002-05-17 | Toshiba Corp | 半導体装置の製造方法 |
| JP4712371B2 (ja) | 2004-12-24 | 2011-06-29 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP2008277696A (ja) * | 2007-05-07 | 2008-11-13 | Toshiba Corp | 半導体装置の製造方法 |
-
1983
- 1983-06-17 JP JP10784383A patent/JPS60732A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| JAPANESE JOURNAL OF APPLIED PHYSICS=1980 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60732A (ja) | 1985-01-05 |
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